msa-0336 cascadable silicon bipolar mmic amplifier data sheet features cascadable 50 ? gain block 3 db bandwidth: dc to 2.7 ghz 12.0 db typical gain at 1.0 ghz 10.0 dbm typical p 1db at 1.0 ghz unconditionally stable (k>1) cost effective ceramic microstrip package description the msa-0336 is a high performance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a cost effective, microstrip package. this mmic is designed for use as a general purpose 50 ? gain block. typical applications include narrow and broad band if and rf amplifiers in industrial and military applications. the msa-series is fabricated using avagos 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold met- allization to achieve excellent performance, unifor- mity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. typical biasing configuration c block c block r bias v cc > 7 v v d = 5 v rfc (optional) in out msa 4 1 2 3 36 micro-x package
2 msa-0336 absolute maximum ratings parameter absolute maximum [1] device current 80 ma power dissipation [2,3] 425 mw rf input power +13 dbm junction temperature 150 c storage temperature [4] C65 to 150 c thermal resistance [2,5] : jc = 150 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 6.7 mw/ c for t c > 136 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. 5. the small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 11.5 12.5 13.5 ? g p gain flatness f = 0.1 to 1.6 ghz db 0.6 1.0 f 3 db 3 db bandwidth ghz 2.7 input vswr f = 0.1 to 3.0 ghz 1.6:1 output vswr f = 0.1 to 3.0 ghz 1.7:1 nf 50 ? noise figure f = 1.0 ghz db 6.0 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 10.0 ip 3 third order intercept point f = 1.0 ghz dbm 23.0 t d group delay f = 1.0 ghz psec 125 v d device voltage v 4.5 5.0 5.5 dv/dt device voltage temperature coefficient mv/ c C8.0 notes: 1. the recommended operating current range for this device is 20 to 50 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 35 ma, z o = 50 ? units min. typ. max. vswr ordering information part numbers no. of devices comments msa-0336-blkg 100 bulk MSA-0336-TR1G 1000 7" reel
3 msa-0336 typical scattering parameters (z o = 50 ? , t a = 25 c, i d = 35 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .05 177 12.6 4.25 175 C18.6 .118 1 .17 C8 0.2 .05 170 12.5 4.24 170 C18.3 .121 2 .17 C17 0.4 .04 161 12.5 4.20 160 C18.3 .122 3 .17 C33 0.6 .04 156 12.4 4.15 151 C18.3 .121 5 .18 C47 0.8 .03 149 12.2 4.09 142 C17.9 .128 8 .19 C61 1.0 .02 154 12.1 4.02 132 C17.6 .131 9 .20 C73 1.5 .03 C104 11.6 3.79 109 C16.8 .145 13 .20 C102 2.0 .08 C136 10.9 3.49 87 C15.7 .164 11 .21 C133 2.5 .14 C157 10.0 3.16 71 C14.9 .180 13 .23 C155 3.0 .21 C176 9.0 2.81 53 C14.6 .187 8 .24 C173 3.5 .27 170 7.9 2.49 36 C13.9 .202 4 .25 178 4.0 .31 157 6.9 2.20 20 C13.6 .209 C1 .24 177 5.0 .37 125 4.9 1.76 C10 C12.9 .226 C12 .20 165 6.0 .51 87 2.8 1.38 C38 C12.8 .230 C25 .22 130 s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, t a = 25 c, i d = 35 ma. 0 2 4 6 8 10 12 14 gain flat to dc v d (v) figure 2. device current vs. voltage. 0 10 20 30 60 i d (ma) 023456 1 40 50 t c = +125 c t c = +25 c t c = ?5 c i d (ma) figure 3. power gain vs. current. 4 6 8 10 12 14 g p (db) 15 25 30 40 50 35 20 5.5 5.0 6.0 6.5 7.0 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. 0 3 6 9 12 15 18 p 1 db (dbm) i d = 50 ma i d = 20 ma i d = 35 ma 4 5 6 7 11 8 9 10 11 12 13 ?5 ?5 +25 +85 +125 p 1 db (dbm) nf (db) g p (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. mounting surface temperature, f = 1.0 ghz, i d = 35 ma. nf g p p 1 db 0.1 ghz 0.5 ghz 1.0 ghz 2.0 ghz i d = 20 ma i d = 35 ma i d = 50 ma
1 3 4 2 source source drain gate 2.15 (0.085) 2.11 (0.083) dia. 0.508 (0.020) 2.54 (0.100) 4.57 0.25 0.180 0.010 0.15 0.05 (0.006 0.002) notes: 1. dimensions are in millimeters (inches) 2. tolerances: in .xxx = 0.005 mm .xx = 0.13 0.56 (0.022) 1.45 0.25 (0.057 0.010) 36 micro-x package dimensions for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies, limited in the united states and other countrie s. data subject to change. copyright ? 2007 avago technologies, limited. all rights reserved. obsoletes 5989-2739en av02-0302en - april 12, 2007
|
